050-7014 rev c 6-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2ll lll power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. apt20m16b2ll apt20m16lll 200v 100a 0.016 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 50a) zero gate voltage drain current (v ds = 200v, v gs = 0v) zero gate voltage drain current (v ds = 160v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current 7 @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 200 0.016 100500 100 35 apt20m16b2ll_lll 200100 400 3040 694 5.56 -55 to 150 300100 50 3000 downloaded from: http:///
dynamic characteristics apt20m16 b2ll_lll 050-7014 rev c 6-2004 characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 100a ) reverse recovery time (i s = -i d 100a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 100a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 100400 1.3 360 6.7 5 symbol r jc r ja min typ max 0.18 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 100v i d = 100a @ 25c resistive switching v gs = 15v v dd = 100v i d = 100a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 133v, v gs = 15v i d = 100a, r g = 5 ? inductive switching @ 125c v dd = 133v, v gs = 15v i d = 100a, r g = 5 ? min typ max 72202330 145140 65 120 1531 29 4 850930 935 985 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.60mh, r g = 25 ? , peak i l = 100a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 100a di / dt 700a/s v r 200v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. 7 the maximum current is limited by lead temperature apt reserves the right to change, without notice, the specifications and information contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.200.16 0.12 0.08 0.04 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7014 rev c 6-2004 apt20m16 b2ll_lll typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 50a v gs = 10v 300250 200 150 100 50 0 1.41.3 1.2 1.1 1.0 0.9 0.8 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 300250 200 150 100 50 0 140120 100 8060 40 20 0 2.52.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 7v t j = +25c t j = -55c 8v 6.5v 7.5v 9v v gs =15v 8.5v t j = +125c 10v v gs =10v v gs =20v lead limited v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 50a 0.02710.0656 0.0859 0.00899f0.0210f 0.293f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
apt20m16 b2ll_lll 050-7014 rev c 6-2004 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage f igure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 200 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t c =+25c t j =+150c single pulse 400100 5010 1 1614 12 10 86 4 2 0 20,00010,000 5,0001,000 500100 220 100 5010 51 operation here limited by r ds (on) c rss c oss c iss 10ms 100s1ms v ds =100v v ds =40v v ds =160v t j =+150c t j =+25c i d = 100a i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 133v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f e on and e off ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 100 9080 70 60 50 40 30 20 10 0 20001500 1000 500 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 45 50 v dd = 133v r g = 5 ? t j = 125c l = 100h v dd = 133v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery v dd = 133v i d = 100a t j = 125c l = 100h e on includes diode reverse recovery 160140 120 100 8060 40 20 0 35003000 2500 2000 1500 1000 500 0 downloaded from: http:///
050-7014 rev c 6-2004 apt20m16 b2ll_lll typical performance curves 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline (b2ll) to-264 (l) package outline (lll) apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% t f 90% i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt100s20 downloaded from: http:///
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